
Toshiba has started shipping test samples of the TW007D120E, a 1,200 V trench-gate SiC MOSFET designed for power supply systems in high-power applications, including EV charging stations, energy storage, AI data centers and photovoltaic inverters. The device is built around Toshiba’s proprietary trench-gate structure, which embeds gate electrodes directly in etched trenches in the semiconduct